?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA30S120P rev. c1 october 2012 FGA30S120P shorted anode tm igbt absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics notes: 1: limited by tjmax symbol description ratings units v ces collector to emitter voltage 1300 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c 60 a collector current @ t c = 100 o c 30 a i cm (1) pulsed collector current 150 a i f diode continuous forward current @ t c = 25 o c 60 a i f diode continuous forward current @ t c = 100 o c 30 a p d maximum power dissipation @ t c = 25 o c 348 w maximum power dissipation @ t c = 100 o c 174 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case -- 0.43 o c / w r ja thermal resistance, junction to ambient -- 40 o c / w g c e to-3pn g c e FGA30S120P shorted anode tm igbt features ? high speed switching ? low saturation voltage: v ce(sat) =1.75v @ i c = 30a ? high input impedance ? rohs compliant applications ? induction heating and microwave oven ? soft switching applications general description using advanced field stop trench and shorted anode technol- ogy, fairchilds shorted anode tm trench igbts offer superior conduction and switching performances, and easy par allel oper- ation with exceptional avalanche capability. this d evice is designed for induction heating and microwave oven.
2 www.fairchildsemi.com FGA30S120P rev. c1 FGA30S120P shorted anode tm igbt package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quant ity FGA30S120P FGA30S120P to-3pn - - 30 symbol parameter test conditions min. typ. max. units off characteristics i ces collector cut-off current v ce = 1300, v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 500 na on characteristics v ge(th) g-e threshold voltage i c = 30ma, v ce = v ge 4.5 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 30a , v ge = 15v t c = 25 o c - 1.75 2.3 v i c = 30a , v ge = 15v, t c = 125 o c - 1.85 - v i c = 30a , v ge = 15v, t c = 175 o c - 1.9 - v v fm diode forward voltage i f = 30a , t c = 25 o c - 1.7 2.2 v i f = 30a , t c = 175 o c - 2.1 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 3345 - pf c oes output capacitance - 75 - pf c res reverse transfer capacitance - 60 - pf switching characcteristics t d(on) turn-on delay time v cc = 600v, i c = 30a, r g = 10 , v ge = 15v, resistive load, t c = 25 o c - 39 - ns t r rise time - 360 - ns t d(off) turn-off delay time - 620 - ns t f fall time - 160 210 ns e on turn-on switching loss - 1.3 - mj e off turn-off switching loss - 1.22 1.6 mj e ts total switching loss - 2.52 - mj t d(on) turn-on delay time v cc = 600v, i c = 30a, r g = 10 , v ge = 15v, resistive load, t c = 175 o c - 38 - ns t r rise time - 375 - ns t d(off) turn-off delay time - 635 - ns t f fall time - 270 - ns e on turn-on switching loss - 1.59 - mj e off turn-off switching loss - 1.78 - mj e ts total switching loss - 3.37 - mj q g total gate charge v ce = 600v, i c = 30a, v ge = 15v - 78 - nc q ge gate to emitter charge - 4.2 - nc q gc gate to collector charge - 33.3 - nc
3 www.fairchildsemi.com FGA30S120P rev. c1 FGA30S120P 1200v, 30a shortedanode tm igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteri stics figure 3. typical saturation voltage figure 4. transfer characteristic s characteritics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0 2 4 6 8 0 40 80 120 160 200 7v v ge = 17v 10v 8v 20v t c = 25 o c 15v 12v 9v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 0 40 80 120 160 200 7v v ge = 17v 10v 8v 20v t c = 175 o c 15v 12v 9v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 5 6 0 40 80 120 160 200 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 40 80 120 160 200 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 60a 30a i c = 15a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 15a 30a 60a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
4 www.fairchildsemi.com FGA30S120P rev. c1 FGA30S120P shorted anode tm igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance cha racteristics figure 9. gate charge characteristics figure 10. soa characteeristics figure 11. turn-on characteristics vs figure 12. turn-off characteristics vs . gate resistance gat e resistance 4 8 12 16 20 0 4 8 12 16 20 i c = 15a 30a 60a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 1 10 10 100 1000 10000 30 20 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 0 30 60 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 1200 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 170 o c 3. single pulse 50 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 200 0 10 20 30 40 50 60 70 100 1000 10000 common emitter v cc = 600v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 10 20 30 40 50 60 70 100 20 common emitter v cc = 600v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 500
5 www.fairchildsemi.com FGA30S120P rev. c1 FGA30S120P shorted anode tm igbt typical performance characteristics figure 13. turn-on characteristics vs. figure 14.turn-off characteristics v s. collector current coll ector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector curren t figure 17. turn off switching soa characteristics figure 18. forward characteristics 20 40 60 100 1000 2500 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 20 40 60 10 100 1000 2500 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 0 10 20 30 40 50 60 70 80 1 10 { common emitter v cc = 600v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 0.5 } 0 10 20 30 40 50 60 70 100 1k 10k { common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c e on e off switching loss [uj] collector current, i c [a] 30k { 0 1 2 1 10 80 t j = 25 o c t c = 25 o c t c = 175 o c t j = 175 o c forward voltage, v f [v] forward current, i f [a] 0.5 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
6 www.fairchildsemi.com FGA30S120P rev. c1 FGA30S120P shorted anode tm igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 figure 19 . .. . transient thermal impedance of igbt t 1 p dm t 2
7 www.fairchildsemi.com FGA30S120P rev. c1 FGA30S120P shorted anode tm igbt mechanical dimensions to-3pn dimensions in millimeters
8 www.fairchildsemi.com FGA30S120P rev. c1 FGA30S120P 1200v, 30a shortedanode tm igbt trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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